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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725AF DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 825V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 12 A Collector Current-Peak 30 A IB B Base Current- Continuous 12 A IBM Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature 20 A PC 45 W TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2725AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 825 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 1.1 1.0 2.0 1.0 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125 VEB= 7.5V ; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 22 hFE-2 DC Current Gain IC= 7A ; VCE= 1V 4 8.5 isc Websitewww.iscsemi.cn 2 |
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